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1N5819U
Aerospace 45 V power Schottky rectifier
Features
A K K

Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package weight: 0.18 g Target radiation qualification - 150 krad (Si) low dose rate - 3 Mrad (Si) high dose rate Under ESCC qualification
A
LCC2B
Description
This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B package. The 1N5819U is suitable for switching mode power supplies and high frequency DC to DC converters such as low voltage high frequency inverter, free wheeling or polarity protection.
Table 1.
Order code 1N5819UB1
Device summary(1)
ESCC detailed specification 5103/028/04 5103/028/05 Quality level Engineering model Flight part Flight part Lead finish Gold plated Gold plated Solder dip EPPL Y Y 1A 45 V 150 C 0.45 V IF(AV) VRRM Tj(max) VF (max)
1N5819U01B 1N5819U02B
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
August 2009
Doc ID 16006 Rev 1
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Characteristics
1N5819U
1
Characteristics
Table 2.
Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Tsol
1.
Absolute ratings (limiting values)
Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Maximum soldering temperature
(2) (1)
Value 45 10 Tc = 135 C = 0.5 tp = 10 ms sinusoidal 1 25 -65 to + 150 150 245
Unit V A A A C C C
dPtot 1 _________ < __________ Rth(j-a) dTj
condition to avoid runaway for a diode on its own heatsink
2. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol Rth(j-c)
Thermal resistances
Parameter Junction to case Value 16 Unit C/W
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1N5819U
Characteristics Table 4.
Symbol
Static electrical characteristics
Parameter Test conditions Tj = 25 C Tj = 100 C Tj = -55 C Tj = -55 C VR = 45 V VR = 45 V VR = 40 V VR = 40 V VR = 35 V VR = 24 V VR = 12 V VR = 6 V IF = 0.1 A Min. IF = 1A IF = 3.1 A Typ. Max. 20 3.5 20 10 15 3 2.5 1.6 1.2 1 350 490 450 650 800 mV mA A Unit A mA
IR(1)
Reverse leakage current
Tj = 25 C Tj = 100 C Tj = 100 C Tj = 100 C Tj = 100 C Tj = 100 C Tj = 25 C Tj = 25 C
VF(2)
Forward voltage drop
Tj = 100 C Tj = - 55 C Tj = 25 C
1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 680 s, < 2%
To evaluate the conduction losses use the following equation: P = 0.285 x IF(AV) + 0.165 IF2(RMS) Table 5.
Symbol
Dynamic characteristics
Parameter Diode capacitance Test conditions VR = 5 V, F = 1 MHz Min. Typ. Max. 70 Unit pF
Cj Figure 1.
PF(AV)(W)
Average forward power dissipation Figure 2. versus average forward current
1.2
Average forward current versus ambient temperature ( = 0.5)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2
IF(AV)(A)
Rth(j-a) = Rth(j-c)
= 0.05 = 0.1 = 0.2
= 0.5
=1
1.0 0.8 0.6 0.4
T =tp / T tp
T =tp / T tp
0.2 0.1 0.0 0.0 0.2 0.4 06 0.8 1.0 1.2
IF(AV)(A)
1.4 1.6
0.0
Tamb(C)
0 25 50 75 100 125 150
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Characteristics
1N5819U
Figure 3.
Non repetitive surge peak forward current versus overload duration (maximum values)
Figure 4.
Relative variation of thermal impedance junction to case versus pulse duration
IM(A)
16 14 12 10 8 6 4
IM
1.0 0.9 0.8 0.7
TC = 25 C TC = 75 C
Zth(j-c) / Rth(j-c)
0.6 0.5 0.4 0.3 0.2
Single pulse
TC = 125 C
= 0.5
t
2 0 1.E-03
t(s)
1.E-02 1.E-01 1.E+00
0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
1.E+01
Figure 5.
Reverse leakage current versus reverse voltage applied (typical values)
TJ = 150 C
Figure 6.
Forward voltage drop versus forward current (typical values)
1.E+02 1.E+01
IR(mA)
10.00
IFM(A)
TJ = 125 C
1.E+00
TJ = 100 C TJ = 75 C
TJ = 50 C
1.00
TJ = 100 C
1.E-01 1.E-02
TJ = 25 C
0.10
TJ = 25 C
1.E-03 1.E-04 0.0
VR(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.01 0.0 0.1 0.2 0.3
TJ = 55 C
VFM(V)
0.7 0.8 0.9 1.0 1.1 1.2
0.4
0.5
0.6
Figure 7.
Non repetitive surge peak forward current versus number of cycles
IFSM(A)
30 25 20 15 10 5 0 0 Number of cycles 10 100 1000 F = 50 Hz Tj initial = 25 C
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1N5819U
Package Information
2
Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. Leadless chip carrier 2 (LCC2B) package dimensions
Dimensions Ref.
A B D Note 1
Millimeters Min. Typ. 2.23 5.40 3.62 1.90 1.4 3.32 1.82 0.15 0.15 0.20 Max. 2.42 5.60 3.76 2.09 0.71 Min.
Inches Typ. Max.
A(1) B
2 C 1
2.04 5.27 3.49 1.71 0.48 -
0.080 0.088 0.095 0.207 0.213 0.220 0.137 0.143 0.150 0.067 0.075 0.082 0.019 0.055 0.131 0.072 0.006 0.006 0.008 0.028 -
C
F Note 1
D E
Pin 2 Cathode E Note 1 E
Pin 1 Anode
F G
H
1
2
r1
G
H I r1 r2
I
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package.
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Ordering Information
1N5819U
3
Ordering Information
Table 7.
Order code 1N5819UB1 1N5819U01B 1N5819U02B
Ordering information(1)
ESCC detailed specification 5103/028/04 5103/028/05 LCC2B Package Lead finish Gold plated Gold plated Solder dip Marking 19UB1 19U01B 19U02B EPPL Weight Y 0.18 g Y 0.18 g Waffle pack Packing
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
4
Revision history
Table 8.
Date 10-Aug-2009
Document revision history
Revision 1 First issue. Changes
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1N5819U
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